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cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 1 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, phototransistor output, very high isolation voltage description the cny6xst, the high isolation voltage smd version optocouplers consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. the single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. vde standards these couplers perform safety functions according to the following equipment standards: ? din en 60747-5-2 (vde 0884) optocoupler for electric al safety requirements ? iec 60065 safety for mains-operated electronic and related household apparatus ? vde 0160 electronic equipment for el ectrical power installation features ? rated recurring peak voltage (repetitive) v iorm = 1450 v peak ? thickness through insulation 3 mm ? creepage current resistance according to vde 0303/iec 60112 comparative tracking index: cti 475 ? moisture sensitivity level msl4 - follow defined storage and soldering requirements ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 applications ? solar and wind power diagnostic, monitoring, and communication equipment ? welding equipment ? high voltage motors ? switch-mode power supplies ? line receiver ? computer peripheral interface ? microprocessor system interface ? circuits for safe protective separation against electrical shock according to safety class ii (reinforced isolation): - for appl. class i to iv at mains voltage 300 v - for appl. class i to iv at mains voltage 600 v - for appl. class i to iii at mains voltage 1000 v according to din en 60747-5-2 (vde 0884) agency approvals ? din en 60747-5-2 (vde 0884) (pending) ? ul1577, file no. e76222 system code h, j, and k (pending) ? vde related features: - rated impulse voltage (transient overvoltage), v iotm = 12 kv peak - isolation test voltage (partial discharge test voltage), v pd = 2.8 kv peak c e a c top view 17187-5 v de 17187-6 cny65st CNY64ST ordering information cny6 #xxxst part number package option ctr bin agency certified/package ctr (%) 5 ma ul, vde 50 to 300 50 to 150 80 to 240 100 to 300 smd-4 hv, 400 mil high is olation distance CNY64ST cny64ayst cny64abst cny64agrst smd-4 hv, 600 mil high is olation distance cny65st cny65ayst cny65abst cny65agrst 10.16 mm 15.24 mm cny64 s t cny65 s t
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 2 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. note ? minimum and maximum values are testing requirements. typical valu es are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 5v forward current i f 75 ma forward surge current t p 10 s i fsm 1.5 a power dissipation p diss 120 mw junction temperature t j 100 c output collector emitter voltage v ceo 32 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation p diss 130 mw junction temperature t j 100 c coupler ac isolation te st voltage cny64axxxst t = 1 min v iso 8.2 kv rms dc isolation test volt age cny65axxxst t = 1 s v iso 13.9 kv total power dissipation p tot 250 mw ambient temperature range t amb - 55 to + 85 c storage temperature range t stg - 55 to + 100 c soldering temperature 2 mm from case, 10 s t sld 260 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.32 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf output collector emitter voltage i c = 1 ma v ceo 32 v emitter collector voltage i e = 100 a v eco 7v collector emitter leakage current v ce = 20 v, i f = 0 ma i ceo 200 na coupler collector emitter sa turation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 3 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? according to din en 60747-5-2 (s ee figure 2). this optoco upler is suitable for safe electric al isolation only within the safet y ratings. compliance with the safety ratings shall be ensured by means of suitable protective circuits. fig. 1 - safety derating diagram fig. 2 - test pu lse diagram for sample test according to din en 60747-5-2 (vde 0884); iec60747-5-5 current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 5 ma CNY64ST ctr 50 300 % cny65st ctr 50 300 % cny64ayst ctr 50 150 % cny65ayst ctr 50 150 % cny64abst ctr 80 240 % cny65abst ctr 80 240 % cny64agrst ctr 100 300 % cny65agrst ctr 100 300 % safety and insulation parameters parameter test condition part symbol min. typ. max. unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 2.8 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 2) v pd 2.2 kv insulation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 v io = 500 v, t amb = 150 c (construction test only) r io 10 9 forward current i si 120 ma power dissipation p so 250 mw rated impulse voltage v iotm 12 kv safety temperature t si 150 c tracking resistance (comparative tracking index) insulation group iva cti 475 minimum external tracking (creepage distance) measured from input pins to output pins CNY64ST 9.5 mm cny65st 14 mm 0 25 50 75 100 125 150 175 200 225 250 0 25 50 75 100 125 150 175 200 t amb (c) 22292 p so (mw) i si (ma) t 13930 t 1 , t 2 = 1 s to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v iowm v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 4 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - test circuit, non-saturated operation fig. 4 - test circuit, saturated operation fig. 5 - switching times switching ch aracteristics parameter test condition symbol min. typ. max. unit delay time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t d 2.6 s rise time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t r 2.4 s fall time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t f 2.7 s storage time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t s 0.3 s turn-on time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t on 5s turn-off time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t off 3s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t on 25 s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t off 42.5 s channel i channel ii 95 10900 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c = 5 ma; adjusted through input amplitude i f 0 i f 50 100 oscilloscope r l 1 m c l 20 pf channel i channel ii 95 10843 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l c l 20 pf 1 m t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time 96 11698
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 5 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 6 - total power dissipation vs. ambient temperature fig. 7 - forward current vs. forward voltage fig. 8 - collector current vs. collector emitter voltage (ns) fig. 9 - collector current vs. collector em itter voltage fig. 10 - leakage current vs. ambient temperature fig. 11 - normalized ctr (sat) vs. ambient temperature 0255075 0 40 80 120 200 240 280 100 p tot - total power dissipation (mw) t amb - ambient temperature (c) 160 coupled device phototransistor 22293 ir-diode v f - forward voltage (v) i f - forward current (ma) 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t amb = - 40 c t amb = 0 c t amb = 50 c t amb = 75 c t amb = 85 c t amb = 25 c t amb = - 55 c 22508 i c - collector current (ma) v ce - collector emitter voltage (n s ) (v) 0 5 10 15 20 25 30 35 40 45 024681012 i f = 30 ma i f = 20 ma i f = 15 ma i f = 10 ma i f = 5 ma 22509 i c - collector current (ma) v ce - collector emitter voltage ( s at) (v) 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5 i f = 25 ma i f = 10 ma i f = 5 ma i f = 2 ma i f = 1 ma i ceo - leakage current (na) t amb - ambient temperature (c) 0.01 0.1 1 10 100 1000 - 55 - 35 - 15 5 25 45 65 85 i f = 0 v ce = 12 v v ce = 24 v v ce = 40 v n ctr - normalized ctr ( s at) t amb - ambient temperature (c) 0 0.2 0.4 0.6 0.8 1.0 1.2 - 55 - 40 - 20 0 20 40 60 85 i f = 10 ma i f = 5 ma i f = 1 ma v ce = 0.4 v
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 6 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - normalized ctr (n s) vs. ambient temperature fig. 13 - normalized ctr (ns) vs. forward current fig. 14 - normalized ctr (sat) vs. forward current fig. 15 - f ctr vs. collector current fig. 16 - f ctr vs. phase angle fig. 17 - switching time vs. load resistance n ctr - normalized ctr (n s ) t amb - ambient temperature (c) 0 0.2 0.4 0.6 0.8 1.0 1.2 - 55 - 40 - 20 0 20 40 60 85 i f = 10 ma i f = 5 ma i f = 1 ma v ce = 5 v n ctr - normalized ctr (n s ) i f - forward current (ma) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 t amb = - 40 c t amb = 0 c t amb = 50 c t amb = 75 c t amb = 85 c v ce = 5 v t amb = 25 c t amb = - 55 c n ctr - normalized ctr ( s at) i f - forward current (ma) 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 t amb = - 40 c t amb = 0 c t amb = 50 c t amb = 75 c t amb = 85 c v ce = 0.4 v t amb = 25 c t amb = - 55 c 22515 f ctr (khz) i c - collector current (ma) 1 10 100 1000 0.1 1 10 100 v ce = 5 v 22516 pha s e (deg) fre q uency (khz) - 180 - 160 - 140 - 120 - 100 - 80 - 60 - 40 - 20 0 20 1 10 100 1000 v ce = 5 v 22517 t on , t off - s witching time ( s ) r l - load re s i s tance (k ) 0.1 1 10 100 1000 0.1 1 10 100 t on t off v ce = 5 v, i f = 10 ma
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 7 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 soldering guidlines soldering condition the cny64axst, cny65axst are lead (pb)-free devices. they are suitable for reflow soldering. however due to large package size, the peak pack age body temperature should not go above 245 c. drypack devices are packed in moisture barrier bags (mbb) to prevent moisture absorption during transportation and storage. each bag contains a desiccant bag. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 72 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 4, according to j-std-020. drying in case of moisture absorpti on devices should be baked before soldering according to the recommended conditions shown below 48 h at 125 c 5 c, rh < 5% (not suitable for tape and reel) in case the floor time has not exceeded 10 days the units can be baked in tape and reel according to the following conditions 168 h at 60 c 5 c, rh < 5 % (not suitable, if the floor time was exceeded by more than 10 days, or the allowed factory condition is exceeded) package dimensions in millimeters for cny64axxxst 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 120 s max. 100 s 217 c max. 20 s max. ramp up 3 c/s max. ramp down 6 c/s max. 2 cycles allowed 22550 cathode emitter anode collector 5.08 0.4 9 15.9 5.08 recommended footprint s pecification s according to din technical drawing s 7.2 0.2 14.4 0.3 12.8 0.2 0.5 0.2 7.05 0.4 6 0.2 2.9 2.1 0.5 0.4 0.1 lead s coplanarity 0.1 max. z z 10:1 6.544-5406.01-4
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 8 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters for cny65axxxst package marking (example) note ? the t at the end of the product designation is not marked on the package 17.8 0.2 s pecification s according to din technical drawing s 19.4 0.3 lead s coplanarity 0.1 max. recommended footprint 20.9 7.62 2.9 14 z 10:1 0.4 0.1 cathode emitter anode collector 7.15 0.4 6.1 0.2 2.1 0.5 7.62 0.4 9.6 0.2 0.5 0.2 z 6.544-5404.01-4 cny65ay v yww 69
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 9 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tape dimensions in millimeters for cny64axxxst tape dimensions in millimeters for cny65axxxst drawing-no.: 9.700-5375.01-4 i ss ue: 1; 23.05.11 s pecification s according to din technical drawing s leader ( s tart) min. 400 mm without device s trailer (end) min. 200 mm without device s direction of feed 7.6 ? 1.55 0.05 2 0.15 4 0.1 ? 2 min. 16 0.1 0.4 0.05 5.65 8 32 0.3 14.2 0.10 13.2 25.5 1.75 0.1 top cover tape drawing-no.: 9.700-5376.01-4 i ss ue: 1; 23.05.11 s pecification s according to din technical drawing s leader ( s tart) min. 400 mm without device s trailer (end) min. 200 mm without device s direction of feed 9.9 ? 1.55 0.05 2 0.15 4 0.1 ? 2 min. 16 0.1 0.4 0.05 5.65 8 32 0.3 14.2 0.10 18.1 25.5 1.75 0.1 top cover tape
cny64ayst, cny64abst, cny64agrst, cny65ayst, cny65abst, cny65agrst www.vishay.com vishay semiconductors rev. 1.0, 20-sep-11 10 document number: 82387 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 reel dimensions in millimeters drawing-no.: 9.800-5120.01-4 i ss ue: 1; 23.05.11 leader and trailer tape: part s mounted empty trailer 200 mm min. empty leader 400 mm min. direction of pulling out unreel direction ? 60 min. ? y 2 0.5 label po s ted here tape po s ition coming out from reel ? 13 0.2 ? 21 0.8 100 mm min. with cover tape not indicated tolerance s 0.1 reel s ize "y" t: ? 330 2 32.4 + 2/0 38.4 max. s pecification s according to din technical drawing s
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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